| 摘要 |
A method for forming a contact hole in a semiconductor device is provided to increase an overlay margin between a contact hole and a bit line pad by preventing a warp of a contact bridge and an insulation layer. An insulation layer(15), which encloses a conductive layer pattern, is formed on a substrate(11). An anti-reflective film(16A) is formed on the insulation layer. A photo-sensitive pattern(17), whose upper area is opened, is formed on the anti-reflective film. The anti-reflective film is etched. The insulation layer is etched by adjusting a flow rate of a main etching gas and an inertia gas, such that a contact hole(18) having a first profile is formed. The conductive layer pattern is a bit line of a semiconductor device. The anti-reflective film is SiON and etched by using a mixture of oxygen containing gas and a CF-group gas.
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