A METHOD FOR NITRIDATING A OXIDE AND A METHOD FOR FORMING A GATE DIELECTRIC LAYER IN SEMICONDUCTOR DEVICE USING THE SAEM

摘要

A method for nitrifying an oxide layer of a semiconductor device is provided to substantially reduce the damage of oxide layer and enhance the reliability of gate insulation layer by supplying plasma bias in a pulse waver type in nitrifying an oxide layer. A method for nitrifying an oxide layer of a semiconductor device includes preparing a substrate(10) with a pattern formed in a three dimensional structure; forming an oxide layer(12) along a step coverage face formed by the pattern of the three-dimensional structure; and nitrifying the oxide layer by supplying plasma bias in a pulse wave type. The nitride processing of the oxide layer is performed so that plasma ions generated by the plasma bias have an electron temperature in a range of 0.5eV~1.5eV. The plasma bias has a frequency of 1KHz~10GHz. The oxide layer is formed of a silicon oxide layer or an insulation layer having a dielectric rate higher than the silicon oxide layer. The plasma bias is obtained by using power having a range of 1KW~20000KW.