| 摘要 |
PROBLEM TO BE SOLVED: To enable a thin equivalent oxide thickness (EOT) and flat surface gate insulation film, in a semiconductor having a high permittivity insulating film (High-K). SOLUTION: When there are diffusion prevention films on both the upper and lower interfaces of a High-K film, a physical film thickness must be in a range of 2.4 nm or larger and 5.0 nm or smaller. When there is a diffusion preventing film on either the upper or the lower interface, the physical film thickness must be in a range of 2.8 nm or larger and 5.0 nm or smaller. When there is no diffusion preventing film on either the upper or the lower interface, the physical film thickness must be in a range of 3.2 nm or larger and 5.0 nm or smaller. When a silicon nitride film as the diffusion preventing film exists on the interface of the High-K film and silicon substrate and the diffusion preventing film containing nitrogen exists on the interface of the High-K film and electrode, an ideally stable EOT and small leakage current characteristics can be achieved, by using EOT of 0.7 nm or larger. COPYRIGHT: (C)2008,JPO&INPIT
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