| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of patterning a thin film (220). SOLUTION: The method comprises a step for forming the thin film (220) to be patterned on a substrate (210), a step for forming an anti-reflective coating (ARC) layer (240) on the thin film (220), and a step for forming a mask layer (250) on the (ARC) layer (240). Thereafter, the mask layer (250) is patterned to form a pattern (254) therein. The pattern (254) is partially transferred to the ARC layer (240) using a transfer process such as an etching process, to form the ARC pattern (242). Once the mask layer (250) is removed, the pattern (242) is completely transferred to the ARC layer (240) using an etching process, and the pattern (242) in the ARC layer (240) is transferred to the underlying thin film (220). COPYRIGHT: (C)2008,JPO&INPIT
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