| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor capable of reducing a drain capacitance per unit gate width. SOLUTION: A rectangular annular gate electrode 21(G) having four sides is formed in a first conductivity type first semiconductor region 14 having a channel formation region, a drain region 18D(D) is formed on the inner side of the gate electrode, a source region 18S(S) is formed with such a width that the channel width of a corresponding drain region is not narrowed in each region on the outer side of the four sides, that is, the gate electrode is formed on all the four sides of the drain region in a rectangular shape for transistor formation. COPYRIGHT: (C)2008,JPO&INPIT
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