| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a minute FeRAM capacitor structure by thinning a hard mask in film thickness. SOLUTION: The semiconductor device is provided with a memory cell transistor MT having source/drain diffusion layers 26, 28 disposed on a semiconductor substrate 10, a gate insulating film 32 disposed on the semiconductor substrate 10 between the source/drain diffusion layers 26 and 28 and a gate electrode 30 disposed on the gate insulating film 32, in a memory cell section; an interlayer insulating film 8 disposed on the semiconductor substrate 10 having the memory cell transistor MT formed thereon; a ferroelectric capacitor C<SB>FE</SB>having a lower electrode 14 disposed on the interlayer insulating film 8, a ferroelectric film 16 disposed on the lower electrode 14 and an upper electrode 18 disposed on the ferroelectric film 16; a hard mask 20 disposed on or above the upper electrode 18; and a first side wall mask 54 disposed on the side wall of the hard mask 20. The ferroelectric capacitor is collectively processed using the hard mask 20 and the first side wall mask 54. COPYRIGHT: (C)2008,JPO&INPIT
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