| 摘要 |
PROBLEM TO BE SOLVED: To reduce a pattern-dimension error due to manufacturing variations in underlying layers. SOLUTION: An electron-beam lithography method is used for exposing a resist formed on a layer to be processed in order to process the layer to be processed formed on the underlying layer having a pattern and a mark. The method includes a step (S403) of obtaining a reflected electronic signal by scanning an electron beam on the mark, steps (S404, S405) of correcting at least one of parameters that define an area density of the pattern and a relation between the area density of the pattern and an irradiation amount of the electron beam on the basis of the reflected electronic signal, a step (S407) of determining the irradiation amount of the electron beam on the basis of the area density of the pattern and the relation between the area density of the pattern and the irradiation amount of the electron beam after correction, and a step (S408) of exposing the resist with the determined irradiation amount of the electron beam. COPYRIGHT: (C)2008,JPO&INPIT
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