| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with which a high remaining polarization amount can be obtained while obtaining satisfactory electric characteristics, and to provide a manufacturing method thereof. SOLUTION: A ferroelectric capacitor 5 is formed on an insulating film 1 formed on or above a silicone substrate. A lower electrode 2 formed on the insulating film 1, a capacitance insulating film 3 formed on it and an upper electrode 4 formed on it are arranged on the ferroelectric capacitor 5. A BiFe<SB>1-X</SB>Cr<SB>X</SB>O<SB>3</SB>film is formed as the capacitance insulating film 3. The BiFe<SB>1-X</SB>Cr<SB>X</SB>O<SB>3</SB>film is mainly composed of BiFeO<SB>3</SB>, and the content of Cr is 8 mol% or below, or it is preferably 3 to 8 mol%. Namely, Cr of 0.08 mol or below, or preferably 0.03 to 0.08 mol is contained in BiFe<SB>1-X</SB>Cr<SB>X</SB>O<SB>3</SB>of 1 mol. In the ferroelectric capacitor of such a structure, leakage current I<SB>leak</SB>can be suppressed to be low while the high remaining polarization amount Pr is obtained. COPYRIGHT: (C)2008,JPO&INPIT
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