PROCESS FOR FABRICATING THIN FILM SEMICONDUCTOR DEVICE, AND THIN FILM SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a process for fabricating a thin film transistor in which a shallow junction diffusion layer can be formed on the surface layer of a semiconductor thin film and thereby the leak current can be suppressed uniformly by relaxing the electric field at the drain end without providing an LDD region. SOLUTION: A gate electrode 9 is patterned on a semiconductor thin film 5 through a gate insulating film 7. An impurity film A is formed by drying a liquid film of a solution containing p-type or n-type impurities (a) formed on the surface of the semiconductor thin film 5. The semiconductor thin film 5 is irradiated with a spot energy beam h' through the impurity film A using the gate electrode 9 as a mask. Consequently, source/drain 11 composed only of a shallow diffusion layer where the impurities (a) are diffused only to the surface layer of the semiconductor thin film 5 is formed. COPYRIGHT: (C)2008,JPO&INPIT