发明名称 LIGHT EMITTING DIODE STRUCTURE
摘要 A light emitting diode structure including a substrate, a first type doped semiconductor layer, an insulating layer, light emitting layers, a second type doped semiconductor layer, a first pad and a second pad is provided. The first type doped semiconductor layer is disposed on the substrate. The insulating layer having openings is disposed on the first type doped semiconductor layer for exposing a part of the first type doped semiconductor layer. The light emitting layers are disposed within the corresponding openings of the insulating layer respectively. The second type doped semiconductor layer is disposed on the insulating layer and the light emitting layers. The first pad is disposed on the first type doped semiconductor layer and is electrically connected thereto. The second pad is disposed on the second type doped semiconductor layer and is electrically connected thereto. Besides, air gaps may also be utilized for separating the light emitting layers.
申请公布号 US2008079013(A1) 申请公布日期 2008.04.03
申请号 US20060535992 申请日期 2006.09.28
申请人 FORMOSA EPITAXY INCORPORATION 发明人 LI YUN-LI;WEN TZU-CHI;WU LIANG-WEN;CHEN CHI-JUI;CHIEN FEN-REN
分类号 H01L33/08 主分类号 H01L33/08
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