发明名称 |
SILICIDE FORMATION ON A WAFER |
摘要 |
A method of selective formation of suicide on a semiconductor wafer, wherein the metal layer (12) is deposited over the entire wafer prior to application of the SiProt mask (10, 16, 22) such that any etching of the mask (10, 16, 22) does not cause any surface deterioration of the silicon wafer. |
申请公布号 |
WO2008038237(A2) |
申请公布日期 |
2008.04.03 |
申请号 |
WO2007IB53912 |
申请日期 |
2007.09.26 |
申请人 |
NXP B.V.;GERRITSEN, ERIC;DE-JONGHE, VERONIQUE;KORDIC, SRDJAN |
发明人 |
GERRITSEN, ERIC;DE-JONGHE, VERONIQUE;KORDIC, SRDJAN |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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