| 摘要 |
A semiconductor component has a semiconductor body (100) with first and second semiconductor layers (110;112), with a first connection zone (20) in the second semiconductor layer (112) and with a channel zone (30) formed between the first connection zone and the drift zone (40). A first control electrode (60) is insulated against the semiconductor body (100) and is adjacent to the channel zone. At least a second control electrode (70) extends from the front face (102) through the second semiconductor layer (112) up to the first semiconductor layer (110) and is insulated against the semiconductor body. |
