Sandwich structure e.g. memory cell such as conductive bridging RAM-cell, has layer isolated from another layer and containing silver and tantalum, which reduces mobility of silver atoms and silver ions

摘要

The structure has a layer (11) consisting of a chalcogenide-material, and another layer (12), which is isolated from the layer. The layer (12) contains silver and tantalum, which reduces the mobility of silver atoms and silver ions. The chalcogenide-material is selected from a group of chalcogenide-materials consisting of germanium selenide, germanium sulphide and combination of sulphur, selenium and/or tellurium with arsenic, germanium, bismuth, nickel silicon and/or zinc. The layer (11) has a thickness within a range of approximately 10 to 500 nanometers. Independent claims are also included for the following: (1) a method of manufacturing a sandwich structure (2) a method of manufacturing a memory cell.