Method for building metal silicide in component field of semiconductor component, involves producing reaction temperature by irradiating component field by radiation of specified wavelength range

摘要

The method involves producing a reaction temperature by irradiating a component field (110) by radiation of a specified wavelength range and building other metal silicide in other component field (120) of a semiconductor component (100) on the basis of other reaction temperature. The other reaction temperature is produced by irradiating the other component field by radiation of a specified wavelength range. The reaction temperature is smaller than other reaction temperature. Independent claims are also included for the following: (1) a method for selective modifying of surface properties of two component fields of a semiconductor component (2) a method for preparing two component fields of a semiconductor component.