NOVEL ORGANOSILANE POLYMER, HARDMASK COMPOSITION FOR RESIST UNDERLAYER FILM COMPRISING THE ORGANOSILANE POLYMER, AND PROCESS OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION

摘要

A hardmask composition for processing a resist underlayer film is provided. The hardmask composition comprises: (a) an organosilane polymer prepared by reacting polycondensation products of hydrolysates of compounds represented by Formulae 1, 2 and 3: [RO]<SUB>3</SUB>Si-Ar (1) (wherein R is methyl or ethyl and Ar is an aromatic ring-containing functional group), [RO]<SUB>3</SUB>Si-H (2) (wherein R is methyl or ethyl), and [RO]<SUB>3</SUB> Si-R' (3) (wherein R is methyl or ethyl and R'is substituted or unsubstituted cyclic or acyclic alkyl) with ethyl vinyl ether of Formula 4: CH<SUB>2</SUB> CHOCH<SUB>2</SUB> CH<SUP>3</SUP> (4) in the presence of an acid catalyst; (b) a solvent; and (c) a crosslinking catalyst.