发明名称 PHASE CHANGE MEMORY CELL INCLUDING NANOCOMPOSITE INSULATOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a phase change memory cell including nanocomposite insulator, contacting a storage material, which makes each more minute selective device operational by reducing electric power required for changing a memory state in a memory cell. <P>SOLUTION: The memory cell includes a first electrode 208, a second electrode 210, the storage material 212 positioned between the first electrode and the second electrode, and the nanocomposite insulator 218 contacting the storage material. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008078625(A) 申请公布日期 2008.04.03
申请号 JP20070187966 申请日期 2007.07.19
申请人 QIMONDA NORTH AMERICA CORP 发明人 HAPP THOMAS;PHILIPP JAN BORIS
分类号 H01L27/105;H01L45/00 主分类号 H01L27/105
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