发明名称 NONVOLATILE STORAGE DEVICE AND ITS OPERATING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile storage device and its operating method. <P>SOLUTION: The nonvolatile storage device includes a first transistor connected to an n-th bit line and a second transistor connected to a (n+1)th bit line. The first transistor and the second transistor are connected in series between the n-th bit line and the (n+1)th bit line. A nonvolatile storage device having two-transistor one-bit unit cells which are the same or similar in the structures of the source areas and drain areas of storage cells can be formed. The storage capacity of the storage device can be doubled since it has two-transistor 2-bit unit cells. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008077826(A) 申请公布日期 2008.04.03
申请号 JP20070245909 申请日期 2007.09.21
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 ZEN SHOBIN;JEON HEE-SEOG;YOO HYUN-KHE;SAI SEIKON;SEO BO-YOUNG;RYU SHIDO
分类号 G11C16/04;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/04
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