| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin torque transistor that can be driven at a high amplification rate. SOLUTION: The spin torque transistor 10 has an input terminal IT and an output terminal OT that are electrically connected to a first nonmagnetic conductor 1. The spin torque transistor 10 includes a gate means GM which is attached to an electron passage area in the first nonmagnetic conductor 1 between the input terminal IT and the output terminal OT and has a first controlled magnetic material GM1 whose magnetic direction is controlled, an input side magnetic material FI which is interposed between the input terminal IT and the first nonmagnetic conductor 1 and has a single magnetizing direction (+Z), a first tunnel barrier layer TI which is interposed between the input side magnetic material FI and the first nonmagnetic conductor 1, and an output side magnetic material FO which is interposed between the output terminal OT and the first nonmagnetic conductor 1 and has a component of the magnetizing direction (-Z) reverse to the above single magnetizing direction (+Z). COPYRIGHT: (C)2008,JPO&INPIT
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