| 摘要 |
A method for fabricating a semiconductor device is provided to ensure an overlap margin between a contact plug and a bit line by forming a pad of the same material as a storage node contact plug. A first interlayer dielectric(240) is deposited on an entire substrate comprising a bit line(140), and then the first interlayer dielectric is etched to form a contact plug contact hole(CH1) for exposing a landing plug in a cell area(C), and a pad contact hole(CH2) for exposing a side of the upper layer of the bit line in a peripheral area(P). A polycrystal silicon layer or a metal layer is deposited on the first interlayer dielectric to bury the contact holes, and then is etched to form a storage node contact plug(150a) in the contact plug contact hole and a pad(150b) in the pad contact hole.
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