| 摘要 |
A method for manufacturing a MOSFET device is provided to decrease an off current while maintaining on current of a transistor, by etching a channel region of a substrate to form a groove and then forming a gate on the groove. A semiconductor substrate(10) having an isolation layer defining an active region is subjected to ion implantation for adjustment of a threshold voltage. A channel predefining region of the substrate implanted with ion to form a groove defining a gate region in the substrate. A gate(70) is formed on the groove, and then an LDD(Lightly Doped Drain) region(100) is formed under the surface of the substrate at both sides of the gate. A spacer(80) is formed at both sidewalls of the gate, and then a source/drain region(200) is formed under the surface of the substrate at both sides of the gate.
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