| 摘要 |
A method for manufacturing a semiconductor device is provided to improve a burying property of an interlayer dielectric by increasing a distance between gates in a cell region. A semiconductor substrate is divided into a cell region(C) and a peripheral region(P). Plural gates(22) are formed on the respective regions. The gate includes a gate insulation film(22a), a gate conductive film(22b), and a gate hard mask film(22c). A buffer oxide film(23), a gate spacer first insulation film(24), a gate spacer second insulation film(25), and a cell spacer first insulation film(26) are separated on the substrate. The first insulation film is deposited using a nitride film. The gate spacer second insulation film is deposited using a TEOS(Tetra Ethyl Ortho Silicate) film. The cell spacer first insulation film is deposited using a nitride film. A COR(Cell Open Recess) etching process is performed on the substrate, on which the cell spacer first insulation film is formed, such that the cell spacer first insulation film and the gate spacer second insulation film are removed from the cell region.
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