| 摘要 |
A method for manufacturing a plug in a semiconductor device is provided to prevent adjacent storage node contact plugs from being short-circuited by reliably opening the adjacent storage node contact hole, while a line type adjacent storage node contact plug is formed. A conductive pattern having a hard mask(37) is formed as an uppermost layer on a substrate(31). A passivation layer(39) is formed on the substrate containing the conductive pattern. The passivation layer is formed by using a polymer organic material containing carbon. The passivation layer is etched by using a line type mask, such that an open portion(40), which opens the conductive pattern, is formed. A silicon film is grown in the open portion, such that a plug(33) is formed. A remaining passivation layer is removed.
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