| 摘要 |
A fuse of a semiconductor device and a method for forming the same are provided to prevent a crack from moving towards an adjacent fuse by forming a contact plug having a deep depth and a wide width. A first conductive layer for metal interconnection is formed on a first interlayer dielectric(40) comprising a first contact plug(H1). A mask pattern for defining an interconnection forming region is formed on the first conductive layer through a photolithography process, and then the first conductive layer is etched using the mask pattern as an etch barrier to form the first metal interconnection(M1) contacting first contact plugs(MIC). A second interlayer dielectric(50) is formed on the entire surface of the substrate comprising the first metal interconnection, and then the second interlayer dielectric layer is etched to form a second contact hole(H2). A second contact plug is formed in the second contact hole.
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