| 摘要 |
A semiconductor device and a fabricating method thereof are provided to improve the device characteristic by depositing a compensation layer and a gate insulating layer on a substrate except for a channel region and forming only a gate insulating layer on the substrate corresponding to the channel region. A pattern having a three-dimensional structure is formed on substrate(20). A compensation layer(21) is formed on the substrate, except for trenches formed by the three-dimensional pattern. A gate insulating layer(24) is formed along a step height of an upper surface of the compensation layer comprising the trenches. A gate electrode(27) is formed on the gate insulating layer to bury the trenches. The compensation layer is made of SiO2 or SiON, and the gate insulating layer is made of at least one selected from the group consisting of SiO2, SiON, ZrO2, HfO2 and Al2O3.
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