METHOD OF MANUFACTURING A GATE STRUCTURE IN A SEMICONDUCTOR DEVICE

摘要

A method for forming a gate structure of a semiconductor device is provided to minimize an agglomeration effect of metal silicide by increasing a surface area of a contact part between silicon and metal. A preliminary gate structure including a polysilicon layer pattern(112) and a sacrificial layer pattern is formed on a substrate(100). A plurality of first spacers(116) are formed on a sidewall of the preliminary gate structure. An opening for exposing the polysilicon layer pattern is formed by removing the sacrificial layer pattern. A first transition metal layer pattern is formed on an upper surface of the exposed polysilicon layer pattern by performing an electroless plating process. A plurality of second spacers including polysilicon are formed on lateral surfaces for defining the opening. A second transition metal layer pattern for burying the opening is formed by performing the electroless plating process. A gate structure including the polysilicon layer pattern and a metal silicide pattern(128) is formed by inducing a reaction among the polysilicon layer pattern, the second spacers, and the first and second transition metal layers.