| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an CMOS image sensor capable of further reducing a dark current and realizing both low current consumption and high sensitivity, and a manufacturing method thereof. <P>SOLUTION: The CMOS image sensor is provided with an n-type impurity layer (PD) 5 for accumulating electrons by photoelectric conversion, and a selecting transistor for transferring the electrons accumulated in the PD to an n-type impurity layer (FD) 21, wherein a gate electrode 10 of the selecting transistor is configured of a p-type polysilicon 11 and an n-type polysilicon 13, and the p-type polysilicon 11 is disposed on the PD side and the n-type polysilicon 13 is disposed on the FD side. In such a configuration, since a potential gradient attracting electrons e- to the FD side is generated in a channel region (transfer channel region) of a transfer transistor, the inflow of the electrons e- from the transfer channel region to the PD can be suppressed. <P>COPYRIGHT: (C)2008,JPO&INPIT |
