| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of producing a nitride semiconductor which enables to improve the crystallinity and surface state of a nitride semiconductor crystal formed on a high-temperature AlN buffer layer. <P>SOLUTION: In the method of producing a nitride semiconductor, an AlN buffer layer is laminated on a substrate for growth and a nitride semiconductor crystal is grown thereon. In this production method, the AlN buffer layer is crystal-grown at a high temperature not less than 900°C, while continuously supplying an Al raw material gas for the AlN buffer layer into a reaction chamber in advance, and then, an N raw material gas is intermittently supplied thereinto. <P>COPYRIGHT: (C)2008,JPO&INPIT |
