发明名称 METHOD FOR SUBSTRATE HEAT MANAGEMENT
摘要 PROBLEM TO BE SOLVED: To provide a heat management method for efficient, rapid, controllable and uniform heat management over a wide range of temperatures. SOLUTION: The method integrates a heat source, heat sink and a heat diffuser. The heat diffuser is placed stationary relative to a wafer surface and coupled to the heat source and the heat sink, which are also stationary relative to the wafer surface. The heat sink includes a heat-carrying medium of controllable temperature. The wafer is heated from a first processing temperature to a second processing temperature during a heating time interval, and then is led to the first processing temperature from the second processing temperature during a cooling time interval. During heating and cooling, the wafer is constantly held at fixed position. Zonal control of the thermal source and nonuniform flow of the thermal sink enables reduction in the thermal nonuniformity on a heating surface with high sensitivity. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008078667(A) 申请公布日期 2008.04.03
申请号 JP20070249527 申请日期 2007.09.26
申请人 ASML HOLDING NV 发明人 BABIKIAN DIKRAN S
分类号 H01L21/027;H01L21/324;C23C16/46;H01L21/00 主分类号 H01L21/027
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