| 摘要 |
PROBLEM TO BE SOLVED: To reduce a capacitor leak current by reducing damage of a side wall of a semiconductor memory device such as FeRAM or MRAM. SOLUTION: A semiconductor device is provided with a source-drain diffusion layer 26 of a switching transistor disposed on a semiconductor substrate 10; an interlayer insulating film 8 disposed on the semiconductor substrate 10 and the source-drain diffusion layer 26; and a ferroelectric capacitor consisting of a lower electrode 14 disposed on the interlayer insulating film 8, a ferroelectric film 16 disposed on the lower electrode 14 and an upper electrode 18 disposed on the ferroelectric film 16. In this device, an angleαformed between a side wall where the upper electrode 18 contacts the ferroelectric film 16 and the surface of the ferroelectric film 16 is larger than an angleβformed between a hard mask side wall 20 near the surface of the upper electrode 18 and the surface of the ferroelectric film 16. COPYRIGHT: (C)2008,JPO&INPIT
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