发明名称 MAGNETORESISTIVE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MAGNETIC STORAGE UNIT
摘要 A magnetoresistive element is disclosed that includes first and second terminals provided on first and second opposing surfaces, respectively, of a magnetoresistive film; the magnetoresistive film including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer stacked in this order from the first terminal side; and a first magnetic coupling interruption layer covering the free magnetization layer and a second magnetic coupling interruption layer covering the first magnetic coupling interruption layer provided between the magnetoresistive element and the second terminal. The first magnetic coupling interruption layer includes a first non-magnetic material causing spin-dependent interface scattering. The second magnetic coupling interruption layer includes a second non-magnetic material different from the first non-magnetic material, the second non-magnetic material containing at least one selected from the group consisting of Al, Ti, Cr, Mn, Zn, Nb, Mo, Ru, Rh, Pd, Ag, In, Hf, Ta, W, Ir, Pt, and Au.
申请公布号 US2008080097(A1) 申请公布日期 2008.04.03
申请号 US20070851062 申请日期 2007.09.06
申请人 FUJITSU LIMITED 发明人 NAGASAKA KEIICHI
分类号 G11B5/33 主分类号 G11B5/33
代理机构 代理人
主权项
地址