| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to improve a manufacturing yield of the semiconductor device by obtaining an etching margin only by using a photo-sensitive pattern. A photo-sensitive pattern(22) is formed on a substrate(21). The photo-sensitive pattern defines a fine pattern region and is formed by coating the substrate using a photo-sensitive film and patterning the substrate. An upper portion of the photo-sensitive pattern is cured(22A) by using an E-beam curing or an ion showering process. The ion showering process is performed to be in-situ with a successive trimming process. The upper portion of the photo-sensitive pattern is cured by applying only a top source thereon. A high density plasma device uses a microwave source.</p> |
