| 摘要 |
A method for manufacturing an MOS device is provided to enhance operation characteristics in a low voltage by reducing a threshold voltage. A method for manufacturing an MOS device comprises forming a buffer oxide layer(42) on a semiconductor substrate(40) including a device isolation layer(41) defining an active region; firstly implanting impurity ion of low concentration into the semiconductor substrate on which the buffer oxide layer is formed; etching the buffer oxide layer and the substrate so that a stepped active region has a protruding portion at the center; forming a gate(43) of an asymmetry step structure in a stepped portion of the step active region; forming spacers at both sidewalls of the gate, respectively implanting impurity ion of high concentration to a substrate of both sides of the gate in which the spacers are formed to form source/drain regions.
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