| 摘要 |
A gate electrode of a ground gate transistor and a static-electricity discharge prevention circuit having the same are provided to simplify a process and prevent a short between a gate electrode and an active area by restraining a damage of gate oxide layer. A gate electrode(110) of a ground gate transistor includes a body part and a comb-teeth part. The comb-teeth part is prolonged in a direction vertical to the body part and coupled to the body part. A portion of the comb-teeth part coupled to the body part is formed in a width-increased type in a diagonal shape with a given slope. The slope has an angle of 5~60°. The body part is formed in an inactive area(130). The comb-teeth part is formed in the inactive area and an active area(120). The body part and the comb-teeth part are formed of a polysilicon layer. In the comb-teeth part, a width of portion coupled to the body part is larger than a width of another side.
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