| 摘要 |
A method for manufacturing an isolation layer of a semiconductor device is provided to prevent generation of stress by preventing an active crack effect in an oxide layer etching process. A trench is formed on a predetermined region of a semiconductor substrate(101) by performing a first etch process using a hard mask as an etch mask. A first oxide layer(102), a nitride layer(103), a liner polysilicon layer(106), and a second oxide layer(104) are formed along a surface on the entire structure including the trench. The second oxide layer and the liner polysilicon layer are left only in the inside of the trench by performing a second etch process. An insulating layer is formed to bury the trench. The first oxide layer having a thickness of 30 to 80 Å is formed by using a CVD method. The thickness of the nitride layer is 1/4 to 1/2 of the depth of the trench.
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