发明名称 A METHOD FOR TREATMENT OF POLYSILAZANE OR POLYSILAZANE SOLUTION, THE POLYSILAZANE OR POLYSILAZANE SOLUTION, AND A FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE
摘要 A method for handling a polysilazane or polysilazane solution is provided to produce the impurity-free polysilazane or polysilazane solution capable of forming insulating films or low-k films comprising micropores and having good characteristics. A method for handling a polysilazane or polysilazane solution includes a step of synthesizing a polysilazane and handling a polysilazane solution or polysilazane comprising a combination of the polysilazane solution within a first space that is shielded from external air and contains air as an air source. The air is free of amine, basic materials, volatile organic compounds, and acidic materials. The air free of amine, basic materials, volatile organic compounds, and acidic materials is formed by passing external air through an adsorbent that absorbs amine, basic materials, volatile organic compounds, and acidic materials.
申请公布号 KR20080029830(A) 申请公布日期 2008.04.03
申请号 KR20070097152 申请日期 2007.09.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKAZAWA KEISUKE;TACHIBANA KATSUHIKO;HOSHI TAKESHI;KIYOTOSHI MASAHIRO;KAWASAKI ATSUKO;ARISUMI OSAMU
分类号 C08G77/62;C08G77/00;H01L21/31 主分类号 C08G77/62
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