| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device whose leakage current is reduced to attain a high voltage resistance, the dispersion of frequency can be controlled, and the threshold voltage is easily controlled and its manufacturing method. <P>SOLUTION: The nitride semiconductor device includes a first nitride semiconductor layer which is composed of a group III-V nitride semiconductor layer laminated on a substrate, a second nitride semiconductor layer which is composed of a group III-V nitride semiconductor layer laminated at a temperature lower than a film-forming temperature of the first nitride semiconductor layer on the first nitride semiconductor layer and is formed in a fine crystal structure without aluminum, a group III-V nitride semiconductor layer which is laminated on the second nitride semiconductor layer in a control electrode forming area, a third nitride semiconductor layer which has a p-type conductivity, and a control electrode which ohmically contacts with the third nitride semiconductor layer. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
