| 摘要 |
There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes a P-type first anode diffusion layer formed in an N-type epitaxial layer, a second anode diffusion layer which is formed so as to surround the first anode diffusion layer, and which has an impurity concentration lower than that of the first anode diffusion layer, N-type cathode diffusion layers formed in the epitaxial layer, and a Schottky barrier metal layer formed on the first and second anode diffusion layers.
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