发明名称 |
METHOD FOR FABRICATING A CAPACITOR |
摘要 |
A method for fabricating a capacitor includes forming an isolation layer over a substrate. The isolation layer forms a plurality of open regions. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose upper outer walls of the storage nodes. A sacrificial layer is formed over the isolation layer to enclose the upper outer walls of the storage nodes. The isolation layer and the sacrificial layer are then removed.
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申请公布号 |
US2008081431(A1) |
申请公布日期 |
2008.04.03 |
申请号 |
US20070772034 |
申请日期 |
2007.06.29 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
ROH JAE-SUNG;LEE KEE-JEUNG;SONG HAN-SANG;YEOM SEUNG-JIN;KIL DEOK-SIN;KIM YOUNG-DAE;KIM JIN-HYOCK |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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