| 摘要 |
A P-channel memory is provided. Each memory unit is constructed of a substrate, a gate structure, a first charge trapping layer, a second charge trapping layer, a first source/drain, and a second source/drain. The gate structure is located above the substrate. The first charge trapping layer and the second charge trapping layer are located on both sidewalls of the gate structure for storing two bit of data in a single memory unit. The first source/drain and the second source/drain are located in the substrate on both sides of the gate structure.
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