SILICON SEMICONDUCTOR BASED HIGH SPEED RING OPTICAL MODULATOR

摘要

A silicon semiconductor-based high-speed ring optical modulator is provided to supply or discharge carriers at a high-speed mode by using a structure of a bipolar transistor at a refractive index changing part. A ring optical waveguide using a bipolar transistor includes a substrate(100), an insulating layer(120), and a semiconductor active layer. The semiconductor active layer is composed of an emitter region(140), a base region(150), a collector region(160), and a sub-collector region(130). The light penetrates the sub-collector region. The substrate is composed of a silicon substrate. The insulating layer is composed of a silicon oxide layer. The semiconductor active layer is composed of a carrier-doped silicon layer.