发明名称 THERMOCOUPLE EMBEDDED HIGH POWER DEVICE AND THE METHOD FOR MANUFACTURING THE SAME
摘要 <p>A high power device having a thermocouple and a method for manufacturing the same are provided to measure stably a highest level of temperature thereof by forming a thermocouple at a periphery thereof. A high power device comprises a heating body, a thermocouple, and a dielectric. The thermocouple is formed to approach the heating body. The dielectric is formed between the heating body and the thermocouple. The thermocouple includes a first and second thin films(112A,113A) which are composed of two kinds of metals or alloys. Ends of sides of the first and second thin films are connected to each other to form a lateral contact point. A via contact is connected to the thermocouple. A pad is formed to connect the via contact with an external lead frame.</p>
申请公布号 KR20080029096(A) 申请公布日期 2008.04.03
申请号 KR20060094656 申请日期 2006.09.28
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 KWAK, CHANG SOO;UHM, MAN SEOK;YOM, IN BOK
分类号 H01L23/32;H01L21/336;H01L29/78 主分类号 H01L23/32
代理机构 代理人
主权项
地址