| 摘要 |
A method for manufacturing a semiconductor device is provided to remove oxides by implanting NH3 and HF gases and performing a curing process using a plasmaless gaseous etching process. A method for manufacturing a semiconductor device comprises burying an insulation layer including at least SOD layer in a trench formed in a device isolation region; and forming a gate by performing a preliminary washing process. The preliminary washing process is performed by a plasmaless process using HF and NH3 gases so that the loss of the SOD layer is prevented. The insulation layer is formed by a stack layer of an HDP layer formed at an upper portion thereof and an SOP layer formed at a lower portion thereof. The plasmaless process is performed at a pressure from 10 to 20mT.
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