| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent a void from being formed in an interlayer dielectric, which is formed on a dummy bit line, by increasing a size of peripheral region around a dummy bit line. A dummy bit line(33) is formed at the outside of a last cell to prevent the collapse of a bit line and a bit line of the layers cell is reliably formed. The dummy bit line includes a first pattern(31) and a pair of second patterns(32). The first pattern has a frame-like shape. The second pattern is arranged in the frame-like first pattern and has a hammer-like shape. Widest portions of the second patterns are arranged in opposite directions with respect to each other.
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