| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problems relating to techniques of improving performances in microprocessing of a semiconductor device that uses active rays or radiation, in particular, KrF excimer laser light, electron beams or EUV light, and to provide a positive resist composition, having proper properties of high resolution, line edge roughness, density dependence and exposure margin, and to provide a pattern forming method that uses the composition. <P>SOLUTION: The positive resist composition comprises a resin, containing a hydroxyl styrene unit (1) and a (meth)acrylic acid ester unit (2) that becomes soluble in an alkali developer solution due to the effect of an acid, in which a mixing rate of (2) is by 0.1 mass% or lower, and insoluble or hardly soluble with an alkali developer solution and becomes soluble with an alkali developing solution due to the effect of acid; and a compound that generates sulfonic acid by the irradiation of active rays or radiation. The composition is used for the pattern forming method. <P>COPYRIGHT: (C)2008,JPO&INPIT |
