| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition for improving etching resistance, a dissolution speed to a development liquid and sensitivity while having desired high sensitivity, high resolution and environmental stability of a resist film. <P>SOLUTION: The resist composition uses a fullerene derivative having characteristics in which (1) it can be simply obtained in high yield, (2) it is soluble in a widely used resist solvent and the development liquid, and (3) it is easy to emit secondary electrons when irradiated with an electron beam, EUV light or an X-ray. Thereby since the resist composition is easy to emit the secondary electrons, it achieves high sensitivity. In addition, the resist composition obtains a high resolution pattern since the dissolution speed is remarkably improved and can prevent substrate defect formation such as development inferiority. <P>COPYRIGHT: (C)2008,JPO&INPIT |
