| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which reduces and simplifies the number of times of lithography processes using photoresist and improves throughput. <P>SOLUTION: An etching mask for forming a pattern on a layer to be processed such as a conductive layer and a semiconductor layer is manufactured without lithography technique using photoresist. The etching mask has a laminated structure composed of an optical absorption layer and an insulating layer and is formed by use of laser ablation through the irradiation of laser beam via a photomask. <P>COPYRIGHT: (C)2008,JPO&INPIT |
| 申请公布号 |
JP2008073768(A) |
申请公布日期 |
2008.04.03 |
| 申请号 |
JP20070214665 |
申请日期 |
2007.08.21 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
MIYAIRI HIDEKAZU;HIGA EIJI |
| 分类号 |
B23K26/00;B23K26/36;G03F7/20;H01L21/027;H01L21/28;H01L21/302;H01L21/306;H01L21/3205;H01L21/336;H01L29/786 |
主分类号 |
B23K26/00 |
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