| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a phase change memory which prevents a phase change layer from being easily peeled from an insulating material layer in cleaning compared to a conventional method, the layer to which a countermeasure against peeling of a metal layer cannot be applied without any change. <P>SOLUTION: All linear portions 40 including first-seventh linear portions 41-47 of the phase change layer are not mutually connected in any one of an end 63 and an end 64, and first-sixth grooves 51-56 are opened to a first direction 61. In executing the method of manufacturing of the phase change memory, a wafer is wet-cleaned using a cleaning liquid such as water or a chemical after patterning the phase change layer. Since the first-sixth grooves 51-56 are opened at the ends 63, 64, the cleaning liquid does not remain in the first-sixth grooves 51-56, but is drained. <P>COPYRIGHT: (C)2008,JPO&INPIT |
