| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase change memory in which a phase change layer is not easily peeled off from an insulating layer compared to a conventional memory, even if heating and cooling are repeated. <P>SOLUTION: A pad 40 of the phase change layer has a center region 42 and a peripheral region 43 viewed from a stack direction. The center region 42 is circular within the pad 40. The peripheral region 43 is outside the center region 42. A slit group 44 is disposed in the center region 42. The slit group 44 consists of a plurality of linear slits parallel to a first direction 51 and arranged in a second direction 52, and all the slits configuring the slit group 44 are disposed in the center region 42. No slit is provided in the peripheral region 43. <P>COPYRIGHT: (C)2008,JPO&INPIT |
