| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of saving a space for a polysilicon resistor area, thereby enabling the system to reduce ON resistance per chip unit area and a method for manufacturing the same. SOLUTION: A semiconductor chip 101 is provided with a cell section 5 where a plurality of unit cells including insulating gate-type transistors are regularly aligned, gate leading wires 13b that are continuously led from each gate electrode 13a of the transistors and are formed in meshed state between the unit cells, and gate coupling wires 13c that are disposed around a circumference of the cell section 5 and are continuously formed with the gate leading wires 13b, while the gate leading wires 13b include polysilicon having a predetermined layer resistance into which a p-type dopant is introduced, and a partial region of the gate leading wires 13b including each coupled section with the gate leading wires 13b and the gate coupling wires 13c is determined to be a high resistance region 103. COPYRIGHT: (C)2008,JPO&INPIT
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