发明名称 Memory devices and memory systems having the same
摘要 A non volatile memory device and a memory system having the same are disclosed. The non volatile memory device may include a memory cell array having a plurality of non volatile memory cells, a DRAM interface for exchanging data, a command and an address with an external device, a controller for selecting one of the memory cells in response to the address and performing a control operation for one of outputting data of the selected memory cell to the external device in response to the command and storing data received from the external device, and a DRAM buffer memory. The DRAM buffer memory has dynamic memory cells, and each of the dynamic memory cells has one transistor with a floating body.
申请公布号 US2008080240(A1) 申请公布日期 2008.04.03
申请号 US20070902424 申请日期 2007.09.21
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 LEE KWANG-JIN;LEE WON-SEOK;KWAK CHOONG-KEUN
分类号 G11C16/00 主分类号 G11C16/00
代理机构 代理人
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